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Journal Articles

Formation of Cu precipitates by ion implantation and thermal annealing for the growth of oxide nanorods

Takeyama, Akinori; Yamamoto, Shunya; Ito, Hiroshi; Yoshikawa, Masahito

Nuclear Instruments and Methods in Physics Research B, 232(1-4), p.333 - 337, 2005/05

https://doi.org/10.1016/j.nimb.2005.03.068

Times Cited Count：0 Percentile：0.01(Instruments & Instrumentation)

Cu precipitates were formed on Si(100) by 200 keV Cu ion implantation and subsequent annealing at 773 K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time. This shape evolution seemed to result from the epitaxial formation of Cu precipitates to minimize the interfacial energy between the precipitate and the Cu implanted substrate. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1 h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.

Journal Articles

High-quality epitaxial TiO $_{2}$ thin films grown on -Al $_{2}$ O $_{3}$ substrates by pulsed laser deposition

Shinohara, Ryuji*; Yamaki, Tetsuya; Yamamoto, Shunya; Ito, Hisayoshi; Asai, Keisuke*

Journal of Materials Science Letters, 21(12), p.967 - 969, 2002/06

https://doi.org/10.1023/A:1016090110315

Times Cited Count：9 Percentile：36.89(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Preparation of TiO $_{2}$ -anatase film on Si(001) substrate with TiN and SrTiO $_{3}$ as buffer layers

Sugiharuto; Yamamoto, Shunya; Sumita, Taishi; Miyashita, Atsumi

Journal of Physics; Condensed Matter, 13(13), p.2875 - 2881, 2001/04

https://doi.org/10.1088/0953-8984/13/13/302

Times Cited Count：15 Percentile：61.85(Physics, Condensed Matter)

An epitaxial TiO $_{2}$ -anatase thin film was grown on the Si(001) substrate with SrTiO $_{3}$ /TiN as the buffer layers by pulsed laser deposition technique under an oxygen gas supply. The characterization of the epitaxial TiO $_{2}$ -anatase film was performed using the X-ray diffraction method. The crystallographic relationships between the TiO $_{2}$ -anatase film and SrTiO $_{3}$ /TiN buffer layers were analyzed by the -2 scan and pole figure measurement. The growth direction of the films was determined as $rm TiO_{2}langle 001rangle$ / $rm SrTiO_{3}langle 001rangle$ / / and their in-plane relationship $rm TiO_{2}{110}$ // $rm SrTiO_{3}{100}$ // // . The crystalline quality of TiO $_{2}$ -anatase was examined by the rocking curve analysis. The composition of the thin film packaging was characterized by Rutherford backscattering spectrometry (RBS) using 2.0 MeV $^{4}$ He beam.